1
Transistor
2SA719, 2SA720
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SC1317 and 2SC1318
s
Features
q
Complementary pair with 2SC1317 and 2SC1318.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO92
EIAJ:SC43A
5.0
0.2
4.0
0.2
5.1
0.2
13.5
0.5
0.45
+0.2
0.1
0.45
+0.2
0.1
1.27
1.27
2.3
0.2
2.54
0.15
2
1
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
30
60
25
50
5
1
500
625
150
55 ~ +150
Unit
V
V
V
A
mA
mW
C
C
2SA719
2SA720
2SA719
2SA720
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10
A, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
V
CE
= 10V, I
C
= 500mA
I
C
= 300mA, I
B
= 30mA
I
C
= 300mA, I
B
= 30mA
V
CB
= 10V, I
E
= 50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
30
60
25
50
5
85
40
typ
0.35
1.1
200
6
max
0.1
340
0.6
1.5
15
Unit
A
V
V
V
V
V
MHz
pF
2SA719
2SA720
2SA719
2SA720
*
h
FE1
Rank classification
Rank
Q
R
S
h
FE1
85 ~ 170
120 ~ 240
170 ~ 340
2
Transistor
2SA719, 2SA720
0
160
40
120
80
140
20
100
60
0
800
600
200
500
700
400
100
300
Ambient temperature Ta (C)
Collector power dissipation P
C
(mW
)
0
12
10
8
2
6
4
0
12
10
8
6
4
2
Ta=25C
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
I
B
=1.0mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
10
8
2
6
4
0
800
600
200
500
700
400
100
300
V
CE
=10V
Ta=25C
Base current I
B
(mA)
Collector current I
C
(mA
)
1
10
100
1000
3
30
300
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=10
Ta=75C
25C
25C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=25C
25C
75C
Collector current I
C
(mA)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0
600
500
400
300
200
100
V
CE
=10V
Ta=75C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
1
3
10
30
100
0
240
200
160
120
80
40
V
CB
=10V
Ta=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
50
40
30
20
10
45
35
25
15
5
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
1
10
100
1000
3
30
300
0
120
100
80
60
40
20
I
C
=2mA
Ta=25C
2SA720
2SA719
Base to emitter resistance R
BE
(k
)
Collector to emitter voltage V
CER
(V
)
P
C
-- Ta
I
C
-- V
CE
I
C
-- I
B
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
V
CER
-- R
BE
3
Transistor
2SA719, 2SA720
0
200
160
40
120
80
1
10
10
2
10
3
10
4
V
CE
=10V
Ambient temperature Ta (C)
I
CEO
(Ta
)
I
CEO
(Ta=25C
)
0.1
1
10
100
0.3
3
30
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
Single pulse
Ta=25C
t=10ms
t=1s
I
CP
I
C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
I
CEO
-- Ta
Area of safe operation (ASO)
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